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December 2013
FCPF400N60
N-Channel SuperFET ? II MOSFET
600 V, 10 A, 400 m Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 350 m Ω
? Ultra Low Gate Charge (Typ. Q g = 28 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 90 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
SuperFET ? II MOSFET is Fairchild Semiconductor ’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
? LCD / LED / PDP TV Lighting
? Solar Inverter
? AC-DC Power Supply
D
D
G
S
TO-220F
G
S
Absolute Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FCPF400N60
600
Unit
V
V GSS
I D
I DM
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
- Pulsed
(f > 1 Hz)
(Note 1)
±20
±30
10*
6.3*
30*
V
A
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
211.6
2.3
1.06
100
20
31
0.25
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FCPF400N60
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
4.0
62.5
o
C/W
?2012 Fairchild Semiconductor Corporation
FCPF400N60 Rev. C4
1
www.fairchildsemi.com
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